Datasheet SI1031R-T1-GE3 - Vishay MOSFET, P, SC-75A — 数据表

Vishay SI1031R-T1-GE3

Part Number: SI1031R-T1-GE3

详细说明

Manufacturer: Vishay

Description: MOSFET, P, SC-75A

Docket:
Si1031R/X
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () 8 at VGS = - 4.5 V - 20 12 at VGS = - 2.5 V 15 at VGS = - 1.8 V 20 at VGS = - 1.5 V ID (mA) - 150 - 125 - 100 - 30

Simulation Model

Specifications:

Alternate Case Style: SOT-416
Continuous Drain Current Id: 140 mA
Current Id Max: -140 mA
Drain Source Voltage Vds: 20 V
ESD HBM: 2 kV
External Depth: 1.7 mm
External Length / Height: 0.8 mm
External Width: 1.6 mm
Junction Temperature Tj Max: 150°C
Junction Temperature Tj Min: -55°C
Mounting Type: SMD
Number of Pins: 3
On State Resistance: 20 Ohm
Operating Temperature Range: -55°C to +150°C
Package / Case: SC-75
Power Dissipation Pd: 250 mW
Power Dissipation Ptot Max: 250 W
Pulse Current Idm: 500 mA
Rds(on) Test Voltage Vgs: -4.5 V
SMD Marking: H
Threshold Voltage Vgs Typ: -1.2 V
Transistor Case Style: SC-75
Transistor Polarity: P Channel
Voltage Vds Typ: -20 V
Voltage Vgs Max: 6 V
Voltage Vgs Rds on Measurement: 1.5 V
Voltage Vgs th Max: -1.2 V
Voltage Vgs th Min: -0.4 V

RoHS: Yes

Accessories:

LICEFA - V11-7-6-10
LICEFA - V11-7
Roth Elektronik - RE901

其他名称:

SI1031RT1GE3, SI1031R T1 GE3