CSD16407Q5
www.ti.com SLPS203A – AUGUST 2009 – REVISED SEPTEMBER 2010 N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16407Q5 FEATURES 1 2 PRODUCT SUMMARY Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
SON 5-mm Г— 6-mm Plastic Package APPLICATIONS VDS Drain-to0source voltage Qg Gate charge, total (4.5 V) Qgd Gate charge, gate-to-drain RDS(on) Drain-to-source on-resistance VGS(th) Threshold voltage Point-of-Load Synchronous Buck Converter
for Applications in Networking, Telecom and
Computing Systems
Optimized for Synchronous FET Applications 25 V 13.3 nC 3.5 nC VGS = 4.5 V 2.5 mΩ VGS = 10 V 1.8 mΩ 1.6 V ORDERING INFORMATION
Device Package Media CSD16407Q5 SON 5 Г— 6 plastic
package 13-inch
reel Qty Ship 2500 Tape and
reel DESCRIPTION
The NexFETв„ў power MOSFET has been designed
to minimize losses in power conversion applications.
Top View
S 8 1 2 7 D S 3 6 D D
G 5 4 VALUE UNIT VDS Drain-to-source voltage 25 V VGS Gate-to-source voltage +16 / –12 V Continuous drain current, TC = 25°C 100 A Continuous drain current (1) 31 A IDM Pulsed drain current, TA = 25°C (2) 200 A PD Power dissipation (1) 3.1 W TJ,
TSTG Operating junction and storage temperature
range –55 to 150 °C EAS Avalanche energy, single pulse
ID = 66A, L = 0.1 mH, RG = 25 Ω 218 mJ ID D S ABSOLUTE MAXIMUM RATINGS
TA = 25В°C unless otherwise stated D (1)
P0094-01 (2) RqJA = 40В°C/W on 1 in2 (6.45 cm2) Cu [2 oz. (0.071 mm …
