Datasheet Texas Instruments CSD16323Q3 — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD16323Q3 |
| 零件号 | CSD16323Q3 |
N通道NexFET™功率MOSFET 8-VSON-CLIP -55至150
数据表
CSD16323Q3 N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 421 Kb, 修订版: C, 档案已发布: Nov 29, 2016
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价格
状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
打包
| Pin | 8 |
| Package Type | DQG |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Device Marking | CSD16323 |
| Width (mm) | 3.3 |
| Length (mm) | 3.3 |
| Thickness (mm) | 1 |
| Mechanical Data | 下载 |
参数化
| Configuration | Single |
| ID, Silicon limited at Tc=25degC | 21 A |
| IDM, Max Pulsed Drain Current(Max) | 112 A |
| Package | SON3x3 mm |
| QG Typ | 6.2 nC |
| QGD Typ | 1.1 nC |
| RDS(on) Typ at VGS=4.5V | 4.4 mOhm |
| Rds(on) Max at VGS=4.5V | 5.5 mOhms |
| VDS | 25 V |
| VGS | 10 V |
| VGSTH Typ | 1.1 V |
生态计划
| RoHS | Compliant |
| Pb Free | Yes |
应用须知
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, 档案已发布: Nov 16, 2011
制造商分类
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor