Datasheet VND1NV04TR-E - STMicroelectronics PWR MOSFET 40 V 1.7 A DPAK — 数据表

详细说明

Manufacturer: STMicroelectronics

Description: PWR MOSFET 40 V 1.7 A DPAK

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Docket:
VND1NV04 VNN1NV04 - VNS1NV04
OMNIFET II fully autoprotected Power MOSFET
Features
Parameter Max on-state resistance (per ch.) Current limitation (typ) Drain-source clamp voltage
Symbol RON ILIMH VCLAMP

Specifications:

• Continuous Drain Current Id: 500 mA
• Current Id Max: 1.7 A
• Drain Source Voltage Vds: 55 V
• Mounting Type: SMD
• Number of Pins: 3
• On State Resistance: 250 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: DPAK
• Power Dissipation Pd: 35 W
• Rds(on) Test Voltage Vgs: 5 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 2.5 V
• Transistor Case Style: D-PAK
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 45 V
• Voltage Vgs Rds on Measurement: 5 V

RoHS: Yes

其他名称:

VND1NV04TRE, VND1NV04TR E