Datasheet PD57006-E - STMicroelectronics MOSFET, RF, 6 W, 945 MHz — 数据表

详细说明

Manufacturer: STMicroelectronics

Description: MOSFET, RF, 6 W, 945 MHz

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Docket:
PD57006-E PD57006S-E
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
Features
Excellent thermal stability Common source configuration POUT = 6 W with 15dB gain @ 945 MHz / 28 V New RF plastic package
PowerSO-10RF (formed lead)

Specifications:

• Continuous Drain Current Id: 1 A
• Current Id Max: 1 A
• Drain Source Voltage Vds: 65 V
• Full Power Rating Temperature: 70°C
• Mounting Type: SMD
• Number of Pins: 3
• Package / Case: PowerSO-10RF
• Power Dissipation Pd: 20 W
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: PowerSO-10RF
• Transistor Polarity: N Channel
• Voltage Vds Typ: 28 V
• Voltage Vgs Max: 20 V

RoHS: Yes

其他名称:

PD57006E, PD57006 E