Datasheet QS6U22TR - Rohm MOSFET, P, VGS -2.5 V — 数据表

Rohm QS6U22TR

Part Number: QS6U22TR

详细说明

Manufacturer: Rohm

Description: MOSFET, P, VGS -2.5 V

data sheetDownload Data Sheet

Docket:
QS6U22
Transistors
2.5V Drive Pch+SBD MOS FET
QS6U22
Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions (Unit : mm)

Specifications:

  • Capacitance Ciss Typ: 270 pF
  • Continuous Drain Current Id: 1.5 A
  • Drain Source Voltage Vds: 20 V
  • Fall Time tf: 20 ns
  • Mounting Type: SMD
  • On State Resistance: 430 MOhm
  • Package / Case: TSMT6
  • Pin Configuration: 1(G), 2(S), 3(A), 4(K), 5(D)
  • Power Dissipation Pd: 900 mW
  • Pulse Current Idm: 6 A
  • Rise Time: 12 ns
  • SVHC: No SVHC (18-Jun-2010)
  • Threshold Voltage Vgs Typ: -2 V
  • Transistor Case Style: TSMT
  • Transistor Polarity: P Channel
  • Transistor Type: Protected MOSFET
  • Voltage Vds Typ: -20 V
  • Voltage Vgs Rds on Measurement: 2.5 V
  • Voltage Vgs th Max: -2 V
  • Voltage Vgs th Min: -0.7 V

RoHS: Yes