Datasheet US5U3TR - Rohm MOSFET, N, VGS=-2.5V — 数据表

Rohm US5U3TR

Part Number: US5U3TR

详细说明

Manufacturer: Rohm

Description: MOSFET, N, VGS=-2.5V

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Docket:
US5U3
Transistors
2.5V Drive Nch+SBD MOSFET
US5U3
Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions (Unit : mm)

Specifications:

  • Capacitance Ciss Typ: 80 pF
  • Continuous Drain Current Id: 1.5 A
  • Drain Source Voltage Vds: 30 V
  • Fall Time tf: 6 ns
  • Mounting Type: SMD
  • On State Resistance: 340 MOhm
  • Package / Case: TUMT5
  • Pin Configuration: 1(G), 2(S), 3(A), 4(K), 5(D)
  • Power Dissipation Pd: 700 mW
  • Pulse Current Idm: 6 A
  • Rise Time: 9 ns
  • SVHC: No SVHC (18-Jun-2010)
  • Threshold Voltage Vgs Typ: 1.5 V
  • Transistor Case Style: TUMT
  • Transistor Polarity: N Channel
  • Transistor Type: Protected MOSFET
  • Voltage Vds Typ: 30 V
  • Voltage Vgs Rds on Measurement: 2.5 V
  • Voltage Vgs th Max: 1.5 V
  • Voltage Vgs th Min: 500 mV

RoHS: Yes