Datasheet RTQ040P02TR - Rohm MOSFET, P, 20 V, 4 A — 数据表

Rohm RTQ040P02TR

Part Number: RTQ040P02TR

详细说明

Manufacturer: Rohm

Description: MOSFET, P, 20 V, 4 A

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Docket:
RTQ040P02
Transistors
2.5V Drive Pch MOS FET
RTQ040P02
Structure Silicon P-channel MOS FET

Simulation ModelSimulation Model

Specifications:

  • Continuous Drain Current Id: 4 A
  • Drain Source Voltage Vds: 20 V
  • Mounting Type: SMD
  • On State Resistance: 85 MOhm
  • Package / Case: TSMT6
  • Power Dissipation Pd: 1.25 W
  • Pulse Current Idm: 16 A
  • SVHC: No SVHC (18-Jun-2010)
  • Threshold Voltage Vgs Typ: -2 V
  • Transistor Case Style: TSMT
  • Transistor Polarity: P Channel
  • Transistor Type: Enhancement
  • Voltage Vds Typ: -20 V
  • Voltage Vgs Rds on Measurement: 4 V
  • Voltage Vgs th Max: -2 V
  • Voltage Vgs th Min: -0.7 V

RoHS: Yes