Datasheet RTQ020N03TR - Rohm MOSFET, N, VGS -2.5 V — 数据表

Rohm RTQ020N03TR

Part Number: RTQ020N03TR

详细说明

Manufacturer: Rohm

Description: MOSFET, N, VGS -2.5 V

data sheetDownload Data Sheet

Docket:
RTQ020N03
Transistors
2.5V Drive Nch MOS FET
RTQ020N03
Structure Silicon N-channel MOS FET External dimensions (Unit : mm)

Simulation ModelSimulation Model

Specifications:

  • Capacitance Ciss Typ: 135 pF
  • Continuous Drain Current Id: 2 A
  • Drain Source Voltage Vds: 30 V
  • Fall Time tf: 9 ns
  • Mounting Type: SMD
  • On State Resistance: 194 MOhm
  • Package / Case: TSMT6
  • Pin Configuration: D(1+2+5+6), S(4), G(3)
  • Power Dissipation Pd: 1.25 W
  • Pulse Current Idm: 8 A
  • Rise Time: 11 ns
  • SVHC: No SVHC (18-Jun-2010)
  • Threshold Voltage Vgs Typ: 1.5 V
  • Transistor Case Style: TSMT
  • Transistor Polarity: N Channel
  • Transistor Type: Protected MOSFET
  • Voltage Vds Typ: 30 V
  • Voltage Vgs Rds on Measurement: 2.5 V
  • Voltage Vgs th Max: 1.5 V
  • Voltage Vgs th Min: 500 mV

RoHS: Yes