Datasheet NIF9N05CLT1G - ON Semiconductor SMART MOSFET, N, 52 V, 1.69 W, SOT-223 — 数据表

ON Semiconductor NIF9N05CLT1G

Part Number: NIF9N05CLT1G

详细说明

Manufacturer: ON Semiconductor

Description: SMART MOSFET, N, 52 V, 1.69 W, SOT-223

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Simulation ModelSimulation Model

Specifications:

  • Avalanche Single Pulse Energy Eas: 110mJ
  • Clamping Voltage Vc Max: 52 V
  • Continuous Drain Current Id: 2.6 A
  • Current Id Max: 2.6 A
  • Drain Source Voltage Vds: 52 V
  • Mounting Type: SMD
  • Number of Pins: 3
  • On State Resistance: 125 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOT-223
  • Pin Configuration: 1(G), 2(D), 3(S), 4-TAB(D)
  • Power Dissipation Pd: 1.69 W
  • Pulse Current Idm: 10 A
  • Rds(on) Test Voltage Vgs: 10 V
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 1.75 V
  • Transistor Case Style: SOT-223
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 52 V
  • Voltage Vgs Max: 15 V DC
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 2.5 V
  • Voltage Vgs th Min: 1.3 V

RoHS: Yes

Accessories:

  • LICEFA - V11-7-6-10
  • LICEFA - V11-7
  • Roth Elektronik - RE901