Datasheet NID6002NT4G - ON Semiconductor SMART MOSFET, N, 65 V, 2.5 W, D-PAK — 数据表

ON Semiconductor NID6002NT4G

Part Number: NID6002NT4G

详细说明

Manufacturer: ON Semiconductor

Description: SMART MOSFET, N, 65 V, 2.5 W, D-PAK

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Docket:
NID6002N
Preferred Device
Self-Protected FET with Temperature and Current Limit
65 V, 6.5 A, Single N-Channel, DPAK
http://onsemi.com

Specifications:

  • Avalanche Single Pulse Energy Eas: 143mJ
  • Continuous Drain Current Id: 6.5 A
  • Current Id Max: 11 A
  • Drain Source Voltage Vds: 65 V
  • Mounting Type: SMD
  • Number of Pins: 3
  • On Resistance Rds(on): 210 MOhm
  • Package / Case: DPAK
  • Pin Configuration: 1(G), 2(D), 3(S)
  • Power Dissipation: 2.5 W
  • Rds(on) Test Voltage Vgs: 10 V
  • SVHC: No SVHC (19-Dec-2011)
  • Shutdown Temperature: 200°C
  • Threshold Voltage Vgs Typ: 1.85 V
  • Transistor Case Style: D-PAK
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 65 V
  • Voltage Vgs Max: 1.85 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 2.4 V
  • Voltage Vgs th Min: 1 V

RoHS: Yes