Datasheet PHK4NQ20T - NXP MOSFET, N, SO-8 — 数据表

NXP PHK4NQ20T

Part Number: PHK4NQ20T

详细说明

Manufacturer: NXP

Description: MOSFET, N, SO-8

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Docket:
PHK4NQ20T
TrenchMOSTM standard level FET
M3D315
Rev.

01 -- 20 January 2003
Product data

Specifications:

  • Continuous Drain Current Id: 4 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 200 V
  • External Depth: 5.2 mm
  • External Length / Height: 1.75 mm
  • External Width: 4.05 mm
  • Full Power Rating Temperature: 25°C
  • Mounting Type: SMD
  • Number of Pins: 8
  • Number of Transistors: 1
  • On State Resistance: 130 MOhm
  • Package / Case: SOIC
  • Power Dissipation Pd: 6.25 W
  • Pulse Current Idm: 16 A
  • Row Pitch: 6.3 mm
  • SMD Marking: PHK4NQ20T
  • SVHC: No SVHC (18-Jun-2010)
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 200 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes