Datasheet PH7030L - NXP MOSFET, N, 30 V, LFPAK — 数据表

详细说明

Manufacturer: NXP

Description: MOSFET, N, 30 V, LFPAK

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Docket:
PH7030L
N-channel TrenchMOS logic level FET
Rev.

05 -- 29 June 2009 Product data sheet
1. Product profile
1.1 General description

Simulation Model

Specifications:

• Continuous Drain Current Id: 68 A
• Current Id Max: 68 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• External Depth: 6.2 mm
• External Length / Height: 1.2 mm
• External Width: 5 mm
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• N-channel Gate Charge: 12nC
• Number of Transistors: 1
• On State Resistance @ Vgs = 4.5V: 9.6 MOhm
• On State Resistance Max: 11 MOhm
• On State Resistance: 9.6 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-669
• Power Dissipation Pd: 62.5 W
• Pulse Current Idm: 220 A
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: SOT-669
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes