Datasheet PH8230E - NXP MOSFET, N, 30 V, LFPAK — 数据表

NXP PH8230E

Part Number: PH8230E

详细说明

Manufacturer: NXP

Description: MOSFET, N, 30 V, LFPAK

data sheetDownload Data Sheet

Docket:
PH8230E
N-channel TrenchMOSTM enhanced logic level FET
M3D748
Rev.

03 -- 02 March 2004
Product data

Simulation ModelSimulation Model

Specifications:

  • Continuous Drain Current Id: 67 A
  • Current Id Max: 67 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 30 V
  • External Depth: 6.2 mm
  • External Length / Height: 1.2 mm
  • External Width: 5 mm
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Mounting Type: SMD
  • N-channel Gate Charge: 14nC
  • Number of Pins: 4
  • On State Resistance @ Vgs = 4.5V: 11 Ohm
  • On State Resistance Max: 8.2 Ohm
  • On State Resistance: 7.6 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOT-669
  • Power Dissipation Pd: 62.5 W
  • Pulse Current Idm: 268 A
  • Rds(on) Test Voltage Vgs: 4.5 V
  • SVHC: No SVHC (18-Jun-2010)
  • Threshold Voltage Vgs Typ: 1.7 V
  • Transistor Case Style: SOT-669
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 30 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Min: 1 V

RoHS: Yes

Accessories:

  • LICEFA - V11-7-6-10
  • LICEFA - V11-7