Datasheet BSH112,235 - NXP MOSFET, N CH, 60 V, 300 mA, SOT-23 — 数据表

NXP BSH112,235

Part Number: BSH112,235

详细说明

Manufacturer: NXP

Description: MOSFET, N CH, 60 V, 300 mA, SOT-23

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Docket:
BSH112
N-channel enhancement mode field-effect transistor
Rev.

01 -- 25 August 2000
M3D088
Product specification

Specifications:

  • Continuous Drain Current Id: 500 mA
  • Current Id Max: 300 mA
  • Drain Source Voltage Vds: 60 V
  • Mounting Type: SMD
  • Number of Pins: 3
  • On Resistance Rds(on): 5 Ohm
  • Operating Temperature Range: -65°C to +150°C
  • Package / Case: SOT-23
  • Power Dissipation: 830 mW
  • Rds(on) Test Voltage Vgs: 10 V
  • SVHC: No SVHC (19-Dec-2011)
  • Threshold Voltage Vgs Typ: 2 V
  • Transistor Case Style: SOT-23
  • Transistor Polarity: N Channel
  • Transistor Type: Enhancement
  • Voltage Vds Typ: 75 V
  • Voltage Vgs Max: 2 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

其他名称:

BSH112235, BSH112 235