Datasheet IXFH23N60Q - IXYS MOSFET, N, TO-247 — 数据表

IXYS IXFH23N60Q

Part Number: IXFH23N60Q

详细说明

Manufacturer: IXYS

Description: MOSFET, N, TO-247

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Docket:
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances
Preliminary Data Sheet
IXFH 23N60Q IXFT 23N60Q

Specifications:

  • Avalanche Single Pulse Energy Eas: 1.5J
  • Continuous Drain Current Id: 23 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 600 V
  • Full Power Rating Temperature: 25°C
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 90nC
  • Number of Pins: 3
  • Number of Transistors: 1
  • On State Resistance Max: 320 MOhm
  • On State Resistance: 320 MOhm
  • Package / Case: TO-247
  • Power Dissipation Pd: 400 W
  • Pulse Current Idm: 92 A
  • Rate of Voltage Change dv / dt: 15V/ns
  • Repetitive Avalanche Energy Max: 30mJ
  • Reverse Recovery Time trr Typ: 250 ns
  • Threshold Voltage Vgs Typ: 4.5 V
  • Transistor Case Style: TO-247
  • Transistor Polarity: N Channel
  • Transistor Type: MOSFET
  • Voltage Vds Typ: 600 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 4.5 V
  • Weight: 6 g

RoHS: Yes

Accessories:

  • Fischer Elektronik - FK 243 MI 247 H
  • Fischer Elektronik - FK 243 MI 247 O
  • Fischer Elektronik - SK 145/25 STS-220
  • Fischer Elektronik - WLK 5