Datasheet IXFH14N60P - IXYS MOSFET, N, TO-247 — 数据表

IXYS IXFH14N60P

Part Number: IXFH14N60P

详细说明

Manufacturer: IXYS

Description: MOSFET, N, TO-247

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Docket:
PolarHVTM HiperFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFA14N60P IXFP14N60P IXFH14N60P
VDSS ID25
RDS(on) trr

Specifications:

  • Capacitance Ciss Typ: 2300 pF
  • Continuous Drain Current Id: 14 A
  • Drain Source Voltage Vds: 600 V
  • Junction to Case Thermal Resistance A: 0.42°C/W
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 38nC
  • Number of Pins: 3
  • On State Resistance: 550 MOhm
  • Package / Case: TO-247
  • Power Dissipation Pd: 300 W
  • Reverse Recovery Time trr Max: 200 ns
  • Threshold Voltage Vgs Typ: 5.5 V
  • Transistor Case Style: TO-247
  • Transistor Polarity: N Channel
  • Transistor Type: High Performance (HiPerFET)
  • Voltage Vds Typ: 600 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

  • Dow Corning - 2265931
  • Fischer Elektronik - FK 243 MI 247 O
  • Fischer Elektronik - WLK 5