Datasheet IXTQ170N10P - IXYS MOSFET, N, TO-3P — 数据表

详细说明

Manufacturer: IXYS

Description: MOSFET, N, TO-3P

Specifications:

• Capacitance Ciss Typ: 6000 pF
• Continuous Drain Current Id: 170 A
• Current Id Max: 170 A
• Drain Source Voltage Vds: 100 V
• Junction to Case Thermal Resistance A: 0.21°C/W
• Mounting Type: Through Hole
• N-channel Gate Charge: 198nC
• Number of Pins: 3
• On State Resistance: 9 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: TO-3P
• Power Dissipation Pd: 714 W
• Rds(on) Test Voltage Vgs: 15 V
• Reverse Recovery Time trr Max: 120 ns
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: TO-3P
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Fischer Elektronik - WLK 5
• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A