Datasheet IXTQ100N25P - IXYS MOSFET, N, TO-3P — 数据表

IXYS IXTQ100N25P

Part Number: IXTQ100N25P

详细说明

Manufacturer: IXYS

Description: MOSFET, N, TO-3P

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Docket:
PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTK 100N25P IXTQ 100N25P IXTT 100N25P
VDSS = 250 V ID25 = 100 A RDS(on) 27 m
Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight

Specifications:

  • Capacitance Ciss Typ: 6300 pF
  • Continuous Drain Current Id: 100 A
  • Current Id Max: 100 A
  • Drain Source Voltage Vds: 250 V
  • Junction to Case Thermal Resistance A: 0.21°C/W
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 185nC
  • Number of Pins: 3
  • On State Resistance: 27 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: TO-3P
  • Power Dissipation Pd: 600 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Reverse Recovery Time trr Max: 200 ns
  • Threshold Voltage Vgs Typ: 5 V
  • Transistor Case Style: TO-3P
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 250 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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