Datasheet IXTP3N120 - IXYS MOSFET, N, TO-220 — 数据表

IXYS IXTP3N120

Part Number: IXTP3N120

详细说明

Manufacturer: IXYS

Description: MOSFET, N, TO-220

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Docket:
High Voltage Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt
IXTA 3N120 IXTP 3N120
VDSS 1200 V
ID25 3A

Specifications:

  • Capacitance Ciss Typ: 1050 pF
  • Continuous Drain Current Id: 3 A
  • Current Id Max: 3 A
  • Drain Source Voltage Vds: 1.2 kV
  • Junction to Case Thermal Resistance A: 0.8°C/W
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 39nC
  • Number of Pins: 3
  • On State Resistance: 4.5 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: TO-220
  • Power Dissipation Pd: 150 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Reverse Recovery Time trr Max: 700 ns
  • Threshold Voltage Vgs Typ: 5 V
  • Transistor Case Style: TO-220
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 1.2 kV
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - SK 145/37,5 STS-220
  • Fischer Elektronik - SK 409/25,4 STS
  • Fischer Elektronik - SK 409/50,8 STS
  • Fischer Elektronik - WLK 5