Datasheet IXFT26N60P - IXYS MOSFET, N, TO-268 — 数据表

IXYS IXFT26N60P

Part Number: IXFT26N60P

详细说明

Manufacturer: IXYS

Description: MOSFET, N, TO-268

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Docket:
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS
VDSS = 600 V ID25 = 26 A RDS(on) 270 m trr 200 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt

Specifications:

  • Capacitance Ciss Typ: 4150 pF
  • Continuous Drain Current Id: 26 A
  • Current Id Max: 26 A
  • Drain Source Voltage Vds: 600 V
  • Junction to Case Thermal Resistance A: 0.27°C/W
  • Mounting Type: SMD
  • N-channel Gate Charge: 72nC
  • Number of Pins: 3
  • On State Resistance: 270 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: TO-268
  • Power Dissipation Pd: 460 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Reverse Recovery Time trr Max: 200 ns
  • Threshold Voltage Vgs Typ: 5 V
  • Transistor Case Style: TO-268
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 600 V
  • Voltage Vgs Max: 30 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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