Datasheet IXFN24N100 - IXYS MOSFET, N, SOT-227B — 数据表

IXYS IXFN24N100

Part Number: IXFN24N100

详细说明

Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

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Docket:
HiPerFETTM Power MOSFET
Single MOSFET Die
Preliminary data sheet
VDSS
ID25

Specifications:

  • Avalanche Single Pulse Energy Eas: 3J
  • Continuous Drain Current Id: 24 A
  • Current Id Max: 24 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 1 kV
  • Full Power Rating Temperature: 25°C
  • Isolation Voltage: 2.5 kV
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Mounting Type: Screw
  • Number of Pins: 3
  • Number of Transistors: 1
  • On State Resistance Max: 390 MOhm
  • On State Resistance: 390 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: ISOTOP
  • Power Dissipation Pd: 600 W
  • Pulse Current Idm: 96 A
  • Rate of Voltage Change dv / dt: 5 V/µs
  • Rds(on) Test Voltage Vgs: 10 V
  • Repetitive Avalanche Energy Max: 60mJ
  • Reverse Recovery Time trr Typ: 250 ns
  • Threshold Voltage Vgs Typ: 5.5 V
  • Transistor Case Style: ISOTOP
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 1 kV
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 5 V
  • Weight: 0.04kg

RoHS: Yes

Accessories:

  • Panasonic - EYGA121807A
  • SCHRODER - 20900