Datasheet IXFH52N30Q - IXYS MOSFET, N, TO-247 — 数据表

IXYS IXFH52N30Q

Part Number: IXFH52N30Q

详细说明

Manufacturer: IXYS

Description: MOSFET, N, TO-247

data sheetDownload Data Sheet

Docket:
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances
Preliminary data
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS Ј IDM, di/dt Ј 100 A/ms, VDD Ј VDSS, TJ Ј 150°C, RG = 2 W TC = 25°C

Specifications:

  • Avalanche Single Pulse Energy Eas: 1.5J
  • Continuous Drain Current Id: 52 A
  • Current Id Max: 52 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 300 V
  • Full Power Rating Temperature: 25°C
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 150nC
  • Number of Pins: 3
  • Number of Transistors: 1
  • On State Resistance Max: 60 MOhm
  • On State Resistance: 60 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: TO-247
  • Power Dissipation Pd: 360 W
  • Pulse Current Idm: 205 A
  • Rate of Voltage Change dv / dt: 5V/ns
  • Rds(on) Test Voltage Vgs: 10 V
  • Repetitive Avalanche Energy Max: 30mJ
  • Reverse Recovery Time trr Typ: 250 ns
  • Threshold Voltage Vgs Typ: 4 V
  • Transistor Case Style: TO-247
  • Transistor Polarity: N Channel
  • Transistor Type: MOSFET
  • Voltage Vds Typ: 300 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 4 V
  • Weight: 6 g

RoHS: Yes

Accessories:

  • Fischer Elektronik - FK 243 MI 247 H
  • Fischer Elektronik - FK 243 MI 247 O
  • Fischer Elektronik - SK 145/25 STS-220
  • Fischer Elektronik - WLK 5