Datasheet IXFH120N20P - IXYS MOSFET, N, TO-247 — 数据表

IXYS IXFH120N20P

Part Number: IXFH120N20P

详细说明

Manufacturer: IXYS

Description: MOSFET, N, TO-247

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Docket:
Advanced Technical Information
PolarHTTM HiPerFET IXFH 120N20P IXFK 120N20P Power MOSFET
N-Channel Enhancement Mode Avalanche Rated, Fast Intrinsic Diode
VDSS = 200 V ID25 = 120 A RDS(on) 22 m trr 140 ns
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight

Specifications:

  • Capacitance Ciss Typ: 6000 pF
  • Continuous Drain Current Id: 120 A
  • Current Id Max: 120 A
  • Drain Source Voltage Vds: 200 V
  • Junction to Case Thermal Resistance A: 0.21°C/W
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 152nC
  • Number of Pins: 3
  • On State Resistance: 22 MOhm
  • Operating Temperature Range: -55°C to +175°C
  • Package / Case: TO-247
  • Power Dissipation Pd: 714 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Reverse Recovery Time trr Max: 200 ns
  • Threshold Voltage Vgs Typ: 5 V
  • Transistor Case Style: TO-247
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 200 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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