Datasheet DE275-501N16A - IXYS RF MOSFET, N, RF, DE275 — 数据表

IXYS RF DE275-501N16A

Part Number: DE275-501N16A

详细说明

Manufacturer: IXYS RF

Description: MOSFET, N, RF, DE275

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Docket:
DE275-501N16A
RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions
Tc = 25°C Derate 1.9W/°C above 25°C Tc = 25°C

Specifications:

  • Capacitance Ciss Typ: 1800 pF
  • Continuous Drain Current Id: 16 A
  • Current Id Max: 16 A
  • Drain Source Voltage Vds: 500 V
  • Number of Pins: 6
  • On State Resistance: 400 MOhm
  • Package / Case: DE-275
  • Power Dissipation Pd: 590 W
  • Rds(on) Test Voltage Vgs: 15 V
  • Rise Time: 2 ns
  • Threshold Voltage Vgs Typ: 5.5 V
  • Transistor Case Style: DE-275
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 500 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 15 V

RoHS: Yes

其他名称:

DE275501N16A, DE275 501N16A