Datasheet IRF6709S2TR1PBF - International Rectifier MOSFET, N-CH, 25 V, DIRECTFETS1 — 数据表

详细说明

Manufacturer: International Rectifier

Description: MOSFET, N-CH, 25 V, DIRECTFETS1

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Docket:
APPROVED
PD - TBD
IRF6709S2TRPbF IRF6709S2TR1PbF
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RoHS Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Control FET Application Compatible with existing Surface Mount Techniques 100% Rg tested

Specifications:

• Alternate Case Style: DirectFET
• Continuous Drain Current Id: 12 A
• Current Id Max: 12 A
• Drain Source Voltage Vds: 25 V
• Mounting Type: SMD
• Number of Pins: 4
• On Resistance Rds(on): 5.9 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: S1
• Power Dissipation: 1.8 W
• Pulse Current Idm: 100 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 1.8 V
• Transistor Case Style: DirectFET
• Transistor Polarity: N Channel
• Voltage Vds Typ: 25 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2.35 V
• Voltage Vgs th Min: 1.35 V

RoHS: Yes