Datasheet SPI08N50C3 - Infineon MOSFET, N, 500 V, I2-PAK — 数据表

Infineon SPI08N50C3

Part Number: SPI08N50C3

详细说明

Manufacturer: Infineon

Description: MOSFET, N, 500 V, I2-PAK

data sheetDownload Data Sheet

Docket:
SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOSTM Power Transistor
Feature · New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Ultra low effective capacitances · Improved transconductance
P-TO220-3-31
1 2 3
VDS @ Tjmax RDS(on) ID

Specifications:

  • Continuous Drain Current Id: 7.6 A
  • Drain Source Voltage Vds: 500 V
  • Mounting Type: Through Hole
  • On Resistance Rds(on): 600 MOhm
  • Package / Case: I2-PAK
  • Power Dissipation Pd: 83 W
  • Pulse Current Idm: 22.8 A
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: I2-PAK
  • Transistor Polarity: N Channel
  • Transistor Type: Enhancement
  • Voltage Vds Typ: 560 V
  • Voltage Vds: 500 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - SK 145/37,5 STS-220
  • Fischer Elektronik - SK 409/25,4 STS
  • Fischer Elektronik - SK 409/50,8 STS
  • Fischer Elektronik - WLK 5