Datasheet IPB60R199CP - Infineon MOSFET, N, TO-263 — 数据表

Infineon IPB60R199CP

Part Number: IPB60R199CP

详细说明

Manufacturer: Infineon

Description: MOSFET, N, TO-263

data sheetDownload Data Sheet

Docket:
IPB60R199CP
CoolMOSTM Power Transistor
Features · Lowest figure-of-merit R ONxQg · Ultra low gate charge · Extreme dv/dt rated · High peak current capability · Qualified according to JEDEC1) for target applications · Pb-free lead plating; RoHS compliant
Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V
0.199 33 nC

Specifications:

  • Continuous Drain Current Id: 16 A
  • Current Id Max: 16 A
  • Drain Source Voltage Vds: 650 V
  • Mounting Type: SMD
  • Number of Pins: 3
  • On Resistance Rds(on): 199 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: TO-263
  • Power Dissipation: 139 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: TO-263
  • Transistor Polarity: N Channel
  • Transistor Type: Power MOSFET
  • Voltage Vds Typ: 650 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V
  • RoHS: Yes
  • SVHC: No SVHC (19-Dec-2011)