Datasheet IPB08CN10N G - Infineon MOSFET, N CH, 95 A, 100 V, PG-TO263-3 — 数据表

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Manufacturer: Infineon

Description: MOSFET, N CH, 95 A, 100 V, PG-TO263-3

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Docket:
IPB08CN10N G IPI08CN10N G IPP08CN10N G
OptiMOSTM2 Power-Transistor
Features · N-channel, normal level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · 175 °C operating temperature · Pb-free lead plating; RoHS compliant · Qualified according to JEDEC1) for target application
Product Summary V DS R DS(on),max (TO263) ID 100 8.2 95 V m A
· Ideal for high-frequency switching and synchronous rectification · Halogen-free according to IEC61249-2-21 Type IPB08CN10N G IPI08CN10N G IPP08CN10N G

Specifications:

• Current Id Max: 95 A
• Drain Source Voltage Vds: 100 V
• Number of Pins: 3
• On Resistance Rds(on): 6.1 MOhm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation Pd: 167 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: TO-263
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vgs Max: 20 V

RoHS: Yes