Datasheet IPB080N03L G - Infineon MOSFET, N CH, 50 A, 30 V, PG-TO263-3 — 数据表
Part Number: IPB080N03L G
详细说明
Manufacturer: Infineon
Description: MOSFET, N CH, 50 A, 30 V, PG-TO263-3
Docket:
Type
IPP080N03L G IPB080N03L G
!"#$%!& 3 Power-Transistor
Features · Fast switching MOSFET for SMPS · Optimized technology for DC/DC converters · Qualified according to JEDEC1) for target applications · N-channel, logic level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · Avalanche rated · Pb-free plating; RoHS compliant · Halogen-free according to IEC61249-2-21 Type IPP080N03L G IPB080N03L G Product Summary V DS R DS(on),max ID 30 8.0 50 V mW A
TM
Specifications:
- Current Id Max: 50 A
- Drain Source Voltage Vds: 30 V
- Number of Pins: 3
- On Resistance Rds(on): 6.7 MOhm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation Pd: 47 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: TO-263
- Transistor Polarity: N Channel
- Transistor Type: Power MOSFET
- Voltage Vgs Max: 20 V
RoHS: Yes