Datasheet IPB06CN10N G - Infineon MOSFET, N CH, 100 A, 100 V, PG-TO263-3 — 数据表

详细说明

Manufacturer: Infineon

Description: MOSFET, N CH, 100 A, 100 V, PG-TO263-3

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Docket:
IPB06CN10N G
IPI06CN10N G IPP06CN10N G
"%&$!"# 2 Power-Transistor
Features R ( 492 ??6= ?@ C == 6= >2 6G R I46=6?E E 492 C IR ;I"[# AC 5F4E ) ' = 82 6 86 @ ! R/ 6C = H @ ?C :D 2 ?46 R ;I"[# J@ 6D E R U @ A6C E E 2 :?8 6>A6C E 6 2 FC R * 3 766 = 5 A= E , @ # - 4@ >A= ?E C 62 2 :?8 :2 R + F2 = :65 2 44@ C :7 5:?8 E % @
)#

Specifications:

• Current Id Max: 100 A
• Drain Source Voltage Vds: 100 V
• Number of Pins: 3
• On Resistance Rds(on): 4.7 MOhm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation Pd: 214 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: TO-263
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vgs Max: 20 V

RoHS: Yes