Datasheet IPB037N06N3 G - Infineon MOSFET, N CH, 90 A, 30 V, PG-TO263-3 — 数据表

详细说明

Manufacturer: Infineon

Description: MOSFET, N CH, 90 A, 30 V, PG-TO263-3

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Docket:
IdQ
TM
IPB037N06N3 G
IPI040N06N3 G IPP040N06N3 G
"%&$!"# 3 Power-Transistor

Specifications:

• Current Id Max: 90 A
• Drain Source Voltage Vds: 60 V
• Number of Pins: 3
• On Resistance Rds(on): 3 MOhm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation Pd: 188 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: TO-263
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vgs Max: 20 V

RoHS: Yes