Datasheet BSS84P - Infineon MOSFET, P, SOT-23 — 数据表

详细说明

Manufacturer: Infineon

Description: MOSFET, P, SOT-23

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Docket:
BSS 84 P SIPMOS Small-Signal-Transistor
Feature
Product Summary VDS RDS(on) ID
3
· P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated

Specifications:

• Avalanche Single Pulse Energy Eas: 2.6mJ
• Capacitance Ciss Typ: 19 pF
• Continuous Drain Current Id: 170 mA
• Current Id Max: 170 mA
• Current Idss Max: 1 µA
• Current Temperature: 25°C
• Device Marking: BSS84P
• Drain Source Voltage Vds: 60 V
• External Depth: 2.5 mm
• External Length / Height: 1.12 mm
• External Width: 3.05 mm
• Fall Time tf: 34 ns
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 8 Ohm
• On State Resistance @ Vgs = 4.5V: 12 Ohm
• On State resistance @ Vgs = 10V: 8 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 360 mW
• Power Dissipation Ptot Max: 360 mW
• Pulse Current Idm: 680 mA
• Rate of Voltage Change dv / dt: 6kV/µs
• Rds(on) Test Voltage Vgs: -10 V
• Repetitive Avalanche Energy Max: 0.036mJ
• Reverse Recovery Time trr Typ: 23 ns
• Rise Time: 9 ns
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Voltage Vgs Max: -1.5 V

RoHS: Yes