Datasheet BSS159N E6327 - Infineon MOSFET, N, SOT-23 — 数据表

详细说明

Manufacturer: Infineon

Description: MOSFET, N, SOT-23

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Docket:
BSS159N
SIPMOS® Small-Signal-Transistor
Features · N-channel · Depletion mode · dv /dt rated · Available with V GS(th) indicator on reel · Pb-free lead-plating; RoHS compliant
Product Summary V DS R DS(on),max I DSS,min 60 8 0.13 V A
SOT-23

Specifications:

• Continuous Drain Current Id: 230 mA
• Current Id Max: 230 mA
• Drain Source Voltage Vds: 60 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 3.5 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 360 mW
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: -2.8 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Voltage Vds Typ: 60 V
• Voltage Vds: 60 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Min: -3.5 V

RoHS: Yes