Datasheet BSS131 - Infineon MOSFET, N, SOT-23 — 数据表
Part Number: BSS131
详细说明
Manufacturer: Infineon
Description: MOSFET, N, SOT-23
Docket:
Type
BSS131
SIPMOS® Small-Signal-Transistor
Feature · N-Channel · Enhancement mode · Logic level · dv /dt rated · Pb-free lead-plating; RoHS compliant
Product Summary V DS R DS(on),max ID 240 14 0.1 V A
Specifications:
- Continuous Drain Current Id: 100 mA
- Current Id Max: 100 mA
- Current Temperature: 25°C
- Drain Source Voltage Vds: 240 V
- External Depth: 2.5 mm
- External Length / Height: 1.12 mm
- External Width: 3.05 mm
- Full Power Rating Temperature: 25°C
- Mounting Type: SMD
- Number of Pins: 3
- Number of Transistors: 1
- On Resistance Rds(on): 16 Ohm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: SOT-23
- Power Dissipation Pd: 360 mW
- Power Dissipation Ptot Max: 360 mW
- Pulse Current Idm: 400 mA
- Rds(on) Test Voltage Vgs: 10 V
- SMD Marking: SRs
- Tape Width: 8 mm
- Threshold Voltage Vgs Typ: 1.4 V
- Transistor Case Style: SOT-23
- Transistor Polarity: N Channel
- Voltage Vds Typ: 240 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th Max: 2 V
RoHS: Yes
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