Datasheet BSP315P - Infineon MOSFET, P, LOGIC, SOT-223 — 数据表

Infineon BSP315P

Part Number: BSP315P

详细说明

Manufacturer: Infineon

Description: MOSFET, P, LOGIC, SOT-223

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Docket:
BSP 315 P SIPMOS ® Small-Signal-Transistor
Features · P-Channel
·
Product Summary Drain source voltage Continuous drain current
VDS ID

Specifications:

  • Continuous Drain Current Id: 1.17 A
  • Current Id Max: 1.17 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 60 V
  • External Depth: 7.3 mm
  • External Length / Height: 1.7 mm
  • External Width: 6.7 mm
  • Full Power Rating Temperature: 25°C
  • Junction Temperature Tj Max: 150°C
  • Mounting Type: SMD
  • Number of Pins: 4
  • Number of Transistors: 1
  • On Resistance Rds(on): 800 MOhm
  • Package / Case: SOT-223
  • Power Dissipation Pd: 1.8 W
  • Power Dissipation Ptot Max: 1.8 W
  • Pulse Current Idm: 4.68 A
  • Rds(on) Test Voltage Vgs: -10 V
  • SMD Marking: BSP315P
  • Tape Width: 12 mm
  • Threshold Voltage Vgs Typ: -1.5 V
  • Transistor Case Style: SOT-223
  • Transistor Polarity: P Channel
  • Voltage Vds Typ: -60 V
  • Voltage Vgs Max: -1.5 V
  • Voltage Vgs Rds on Measurement: -10 V
  • Voltage Vgs th Max: -2 V

RoHS: Yes