Datasheet BSC047N08NS3 G - Infineon MOSFET, N CH, 100 A, 80 V, PG-TDSON-8 — 数据表

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Manufacturer: Infineon

Description: MOSFET, N CH, 100 A, 80 V, PG-TDSON-8

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Docket:
BSC047N08NS3 G
OptiMOSTM3 Power-Transistor
Features · Ideal for high frequency switching and sync.

rec. · Optimized technology for DC/DC converters · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance RDS(on) · Superior thermal resistance · N-channel, normal level · 100% avalanche tested · Pb-free plating; RoHS compliant · Qualified according to JEDEC1) for target applications · Halogen-free according to IEC61249-2-21 Type BSC047N08NS3 G
Product Summary V DS R DS(on),max ID 80 4.7 100 V m A
Package Marking

Specifications:

• Current Id Max: 100 A
• Drain Source Voltage Vds: 80 V
• Number of Pins: 8
• On Resistance Rds(on): 3.9 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 125 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: PG-TSDSON
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vgs Max: 20 V

RoHS: Yes