Datasheet BSC016N04LS G - Infineon MOSFET, N CH, 100 A, 40 V, PG-TDSON-8 — 数据表

Infineon BSC016N04LS G

Part Number: BSC016N04LS G

详细说明

Manufacturer: Infineon

Description: MOSFET, N CH, 100 A, 40 V, PG-TDSON-8

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Docket:
BSC016N04LS G
OptiMOSTM3 Power-Transistor
Features · Fast switching MOSFET for SMPS · Optimized technology for DC/DC converters · Qualified according to JEDEC1) for target applications · N-channel · Logic level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · Superior thermal resistance · 100% Avalanche tested · Pb-free plating; RoHS compliant; ·Halogen-free according to IEC61249-2-21 Type BSC016N04LS G Package PG-TDSON-8 Marking 016N04LS
Product Summary V DS R DS(on),max ID 40 1.6 100 PG-TDSON-8 V m A
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=50 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Gate source voltage

Specifications:

  • Current Id Max: 100 A
  • Drain Source Voltage Vds: 40 V
  • Number of Pins: 8
  • On Resistance Rds(on): 1.3 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation Pd: 139 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: PG-TSDSON
  • Transistor Polarity: N Channel
  • Transistor Type: Power MOSFET
  • Voltage Vgs Max: 20 V

RoHS: Yes