Datasheet NDT451AN - Fairchild MOSFET, N CH 30 V, 7.2 A SOT-223 — 数据表
Part Number: NDT451AN
详细说明
Manufacturer: Fairchild
Description: MOSFET, N CH 30 V, 7.2 A SOT-223
Docket:
February 2009
NDT451AN N-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Features
Specifications:
- Continuous Drain Current Id: 7.2 A
- Drain Source Voltage Vds: 30 V
- MSL: MSL 1 - Unlimited
- Number of Pins: 4
- On Resistance Rds(on): 0.03 Ohm
- Operating Temperature Range: -65°C to +150°C
- Power Dissipation: 1.1 W
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 1.6 V
- Transistor Case Style: SOT-223
- Transistor Polarity: N Channel
- RoHS: Y-Ex
- SVHC: No SVHC (18-Jun-2012)