Datasheet NDS9952A - Fairchild MOSFET, NP CH, 30 V, 3.7/-2.9 A, 8SOIC — 数据表

Fairchild NDS9952A

Part Number: NDS9952A

详细说明

Manufacturer: Fairchild

Description: MOSFET, NP CH, 30 V, 3.7/-2.9 A, 8SOIC

Docket:
February 1996
NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features

Specifications:

Continuous Drain Current Id: 3.7 A
Current Id Max: 3.7 A
Drain Source Voltage Vds: 30 V
Mounting Type: SMD
Number of Pins: 8
On Resistance Rds(on): 80 MOhm
Operating Temperature Range: -55°C to +150°C
Package / Case: SOIC
Power Dissipation: 2 W
Rds(on) Test Voltage Vgs: 10 V
SVHC: No SVHC (19-Dec-2011)
Threshold Voltage Vgs Typ: 1.7 V
Transistor Case Style: SOIC
Transistor Polarity: N and P Channel
Voltage Vds Typ: 30 V
Voltage Vgs Max: 1.7 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes