Datasheet NDS355AN - Fairchild MOSFET, N, SOT-23 — 数据表

Fairchild NDS355AN

Part Number: NDS355AN

详细说明

Manufacturer: Fairchild

Description: MOSFET, N, SOT-23

Docket:
January 1997
NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features

Specifications:

Continuous Drain Current Id: 1.7 A
Current Id Max: 1.7 A
Current Temperature: 25°C
Device Marking: NDS355AN
Drain Source Voltage Vds: 30 V
External Depth: 2.5 mm
External Length / Height: 1.12 mm
External Width: 3.05 mm
Full Power Rating Temperature: 25°C
Mounting Type: SMD
Number of Pins: 3
Number of Transistors: 1
On Resistance Rds(on): 125 MOhm
Package / Case: SOT-23
Power Dissipation Pd: 500 mW
Pulse Current Idm: 10 A
Rds(on) Test Voltage Vgs: 10 V
SMD Marking: NDS355AN
SVHC: No SVHC (15-Dec-2010)
Tape Width: 8 mm
Threshold Voltage Vgs Typ: 1.6 V
Transistor Case Style: SOT-23
Transistor Polarity: N Channel
Voltage Vds Typ: 30 V
Voltage Vgs Max: 1.6 V
Voltage Vgs Rds on Measurement: 10 V
Voltage Vgs th Max: 2 V

RoHS: Yes

Accessories:

LICEFA - V11-7
Roth Elektronik - RE901