Datasheet NDB6060L - Fairchild MOSFET, N, D2-PAK — 数据表

详细说明

Manufacturer: Fairchild

Description: MOSFET, N, D2-PAK

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Docket:
April 1996
NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features

Specifications:

• Alternate Case Style: D2-PAK
• Capacitance Ciss Typ: 1630 pF
• Continuous Drain Current Id: 48 A
• Current Id Max: 48 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 60 V
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 25 MOhm
• Package / Case: D2-PAK
• Power Dissipation Pd: 100 W
• Pulse Current Idm: 144 A
• Rds(on) Test Voltage Vgs: 5 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 2 V
• Transistor Case Style: D2-PAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 60 V
• Voltage Vgs Max: 2 V
• Voltage Vgs Rds on Measurement: 5 V
• Voltage Vgs th Max: 2 V
• Voltage Vgs th Min: 1 V

RoHS: Y-Ex

Accessories:

• Fischer Elektronik - FK 244 08 D2 PAK
• Fischer Elektronik - FK 244 13 D2 PAK
• Fischer Elektronik - WLK 5