Datasheet FDV304P - Fairchild MOSFET, P, DIGITAL, SOT-23 — 数据表

详细说明

Manufacturer: Fairchild

Description: MOSFET, P, DIGITAL, SOT-23

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Docket:
August 1997
FDV304P Digital FET, P-Channel
General Description
This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
Features

Specifications:

• Continuous Drain Current Id: 460 mA
• Current Id Max: 460 mA
• Current Temperature: 25°C
• Drain Source Voltage Vds: 25 V
• ESD HBM: 6 kV
• External Depth: 2.5 mm
• External Length / Height: 1.12 mm
• External Width: 3.05 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 1.5 Ohm
• Package / Case: SOT-23
• Power Dissipation Pd: 350 mW
• Pulse Current Idm: 500 mA
• Rds(on) Test Voltage Vgs: 2.7 V
• SMD Marking: 304P
• SVHC: No SVHC (15-Dec-2010)
• Tape Width: 8 mm
• Threshold Voltage Vgs Typ: -860 mV
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Voltage Vds Typ: -25 V
• Voltage Vgs Max: -860 mV
• Voltage Vgs Rds on Measurement: -4.5 V
• Voltage Vgs th Max: -1.5 V

RoHS: Yes

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