Datasheet FDS6875 - Fairchild MOSFET, DUAL, PP, SO-8 — 数据表

详细说明

Manufacturer: Fairchild

Description: MOSFET, DUAL, PP, SO-8

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Docket:
November 1998
FDS6875 Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.
Features

Specifications:

• Continuous Drain Current Id: 6 A
• Current Id Max: -6 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 20 V
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 30 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation Pd: 2 W
• Pulse Current Idm: 20 A
• Rds(on) Test Voltage Vgs: -4.5 V
• SMD Marking: FDS6875
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: -800 mV
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel
• Voltage Vds Typ: -20 V
• Voltage Vds: 20 V
• Voltage Vgs Max: -800 mV
• Voltage Vgs Rds on Measurement: -4.5 V
• Voltage Vgs th Max: -1.5 V

RoHS: Yes