Datasheet FDB8880 - Fairchild MOSFET, N, D2-PAK — 数据表
Part Number: FDB8880
详细说明
Manufacturer: Fairchild
Description: MOSFET, N, D2-PAK
Docket:
FDP8880 / FDB8880
February 2005
FDP8880 / FDB8880 N-Channel PowerTrench® MOSFET
30V, 54A, 11.6m Features
r DS(ON) = 14.5m, VGS = 4.5V, ID = 40A r DS(ON) = 11.6m, VGS = 10V, ID = 40A High performance trench technology for extremely low r DS(ON) Low gate charge High power and current handling capability
Specifications:
- Continuous Drain Current Id: 54 A
- Current Id Max: 11 A
- Current Temperature: 25°C
- Drain Source Voltage Vds: 30 V
- External Depth: 15.49 mm
- External Length / Height: 4.69 mm
- External Width: 10.54 mm
- Full Power Rating Temperature: 25°C
- Mounting Type: SMD
- Number of Pins: 3
- Number of Transistors: 1
- On Resistance Rds(on): 9.5 MOhm
- Operating Temperature Range: -55°C to +175°C
- Package / Case: D2-PAK
- Power Dissipation: 55 W
- Rds(on) Test Voltage Vgs: 10 V
- SMD Marking: FDB8880
- SVHC: No SVHC (19-Dec-2011)
- Threshold Voltage Vgs Typ: 2.5 V
- Transistor Case Style: D2-PAK
- Transistor Polarity: N Channel
- Voltage Vds Typ: 30 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th Max: 2.5 V
- Voltage Vgs th Min: 1.2 V
RoHS: Yes