Datasheet ZXM62P02E6 - Diodes MOSFET, P, SOT-23-6 — 数据表

Diodes ZXM62P02E6

Part Number: ZXM62P02E6

详细说明

Manufacturer: Diodes

Description: MOSFET, P, SOT-23-6

Docket:
ZXM62P02E6
20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS=-20V; RDS(ON)=0.20 ; ID=-2.3A
DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed.

This makes them ideal for high efficiency, low voltage, power management applications. FEATURES · · · · · · · · · Low on-resistance Fast switching speed Low threshold Low gate drive SOT23-6 package
SOT23-6

Simulation Model

Specifications:

Continuous Drain Current Id: 2.3 A
Current Id Max: -2.3 A
Current Temperature: 25°C
Drain Source Voltage Vds: 20 V
Mounting Type: SMD
Number of Pins: 6
Number of Transistors: 1
On Resistance Rds(on): 200 MOhm
On State Resistance Max: 200 MOhm
Operating Temperature Range: -55°C to +150°C
Package / Case: SOT-23
Power Dissipation Pd: 1.1 W
Pulse Current Idm: 13 A
Rds(on) Test Voltage Vgs: 4.5 V
SMD Marking: 2P02
SVHC: No SVHC (15-Dec-2010)
Threshold Voltage Vgs Typ: -700 mV
Transistor Case Style: SOT-23
Transistor Polarity: P Channel
Voltage Vds Typ: -20 V
Voltage Vgs Max: -12 V
Voltage Vgs Rds on Measurement: -4.5 V
Voltage Vgs th Min: -0.7 V

RoHS: Yes

Accessories:

LICEFA - V11-7-6-10
LICEFA - V11-7
Roth Elektronik - RE901