Datasheet VS-GA200SA60SP - Vishay IGBT, SOT-227 — 数据表

Vishay VS-GA200SA60SP

Part Number: VS-GA200SA60SP

详细说明

Manufacturer: Vishay

Description: IGBT, SOT-227

data sheetDownload Data Sheet

Docket:
PD- 50070A
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INSULATED GATE BIPOLAR TRANSISTOR
Features
· Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz · Lowest conduction losses available · Fully isolated package ( 2,500 volt AC) · Very low internal inductance ( 5 nH typ.) · Industry standard outline

Specifications:

  • Collector Emitter Voltage V(br)ceo: 600 V
  • Collector Emitter Voltage Vces: 1.1 V
  • Current Ic Continuous a Max: 200 A
  • Current Temperature: 25°C
  • DC Collector Current: 200 A
  • Fall Time tf: 660 ns
  • Full Power Rating Temperature: 25°C
  • Number of Pins: 4
  • Number of Transistors: 1
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: ISOTOP
  • Power Dissipation Max: 630 W
  • Power Dissipation Pd: 630 W
  • Power Dissipation: 630 W
  • Pulsed Current Icm: 400 A
  • Rise Time: 60 ns
  • Termination Type: Screw
  • Transistor Case Style: ISOTOP
  • Transistor Polarity: N Channel
  • Transistor Type:
  • Voltage Vces: 600 V

RoHS: Yes

Accessories:

  • Nettlefolds - MB04040010007FA
  • SCHRODER - 13459

其他名称:

VSGA200SA60SP, VS GA200SA60SP