Datasheet IHW30N120R2 - Infineon IGBT+ DIODE,1200V,30A,TO247 — 数据表

Infineon IHW30N120R2

Part Number: IHW30N120R2

详细说明

Manufacturer: Infineon

Description: IGBT+ DIODE,1200V,30A,TO247

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Docket:
IHW30N120R2
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features: · Powerful monolithic Body Diode with very low forward voltage · Body diode clamps negative voltages · TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior · NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) · Low EMI · Qualified according to JEDEC1 for target applications · Pb-free lead plating; RoHS compliant · Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications: · Inductive Cooking · Soft Switching Applications Type IHW30N120R2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE 1200V, Tj 175°C) Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by T

Specifications:

  • Transistor Type: IGBT
  • DC Collector Current: 30 A
  • Collector Emitter Voltage Vces: 1.8 V
  • Power Dissipation Max: 390 W
  • Collector Emitter Voltage V(br)ceo: 1.2kV
  • Operating Temperature Range: -40°C to +175°C
  • Transistor Case Style: TO-247
  • Number of Pins: 3

RoHS: Yes

Accessories:

  • Fischer Elektronik - THFU 2