JX4S0020120M
1200V N-Channel MOSFET Description
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching
performance and higher reliability compared to Silicon. In addition, the low ON resistance and
compact chip size ensure low capacitance and gate charge. Consequently, system benefits include
highest efficiency, faster operating frequency, increased power density, reduced EMI, and
reduced system size. Features
High Speed Switching with Low Capacitances
High Blocking Voltage with Low RDS(on)
Optimized package with separate driver source pin
Easy to parallel and simple to drive
ROHS Compliant, Halogen free Application
EV motor drive
High Voltage DC/DC Converters
Switch Mode Power Supplies
Solar inverters
EV charging Ordering Information
Part Number
JX4S0020120M Marking
JX4S0020120M 1 Package Packaging TO-247 Tube JX4S0020120M
Absolute Maximum Ratings(Tc=25 )
Symbol Value Unit Drain-Source Voltage 1200 V ID Drain Current(continuous)at Tc=25℃ 115 A ID Drain Current(continuous)at Tc=100℃ 85 A IDM Drain Current (pulsed) 250 A VGS Gate-Source Voltage -10/+22 V 550 W -55 to +150 ℃ VDS PD
TJ, Tstg Parameter Power Dissipation TC = 25°C …
