Datasheet Inchange Semiconductor 2SK2350 — 数据表
| 制造商 | Inchange Semiconductor |
| 系列 | 2SK2350 |
| 零件号 | 2SK2350 |
采用 TO-220F 封装的 N 沟道 MOSFET 晶体管
数据表
N-Channel MOSFET Transistor in TO-220F package
isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK2350 DESCRIPTION Drain Current ID= 8.5A@ TC=25℃ Drain Source Voltage: VDSS= 200V(Min) Fast Switching Speed APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±30 V Drain Current-continuous@ TC=25℃ 8.5 A Pulsed Drain Current 34 A Total Dissipation@TC=25℃ 30 W Max. Operating Junction Temperature 150 ℃ -55~150 ℃ ID
ID(puls)
Ptot
Tj
Tstg Storage Temperature Range THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 4.16 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor 2SK2350 ELECTRICAL CHARACTERISTICS (TC=25℃) PARAMETER SYMBOL V(BR)DSS CONDITIONS MIN Drain-Source Breakdown Voltage VGS= 0; ID= 10mA 200 Gate Threshold Voltage VDS= 10V; ID=1mA 1.5 Diode Forward On-Voltage IS=10A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 5A IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance VGS(th)
VSD TYPE MAX UNIT V 3.5 V 2.0 V 0.4 Ω VGS= ±16V;VDS= 0 ±10 µA VDS= 200V; VGS= 0 100 µA VDS=10V;
VGS=0V; 0.26 700 80 pF fT=1MHz
Coss tr Output Capacitance 270 Rise Time 15
VGS=10V; ton Turn-on Time ID=5A; 25
ns VDD=100V;
tf Fall Time 15
RL=20Ω toff Turn-off Time isc website：www.iscsemi.cn 70 2 isc & iscsemi is registered trademark …